发明名称 HIGH GAIN RF POWER AMPLIFIER WITH NEGATIVE CAPACITOR
摘要 A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
申请公布号 WO2016183516(A1) 申请公布日期 2016.11.17
申请号 WO2016US32531 申请日期 2016.05.13
申请人 RFAXIS, INC. 发明人 GORBACHOV, Oleksandr;ZHANG, Lisette L.;MUSIOL, Lothar
分类号 H04B1/04;H03F1/56;H03F3/20;H03H7/38 主分类号 H04B1/04
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