发明名称 |
HIGH GAIN RF POWER AMPLIFIER WITH NEGATIVE CAPACITOR |
摘要 |
A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal. |
申请公布号 |
WO2016183516(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
WO2016US32531 |
申请日期 |
2016.05.13 |
申请人 |
RFAXIS, INC. |
发明人 |
GORBACHOV, Oleksandr;ZHANG, Lisette L.;MUSIOL, Lothar |
分类号 |
H04B1/04;H03F1/56;H03F3/20;H03H7/38 |
主分类号 |
H04B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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