发明名称 |
ACTIVE AREA DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER DEVICES AND CORRESPONDING METHODS |
摘要 |
The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to active area designs for SiC super-junction (SJ) power devices. A SiC-SJ device includes an active area having one or more charge balance (CB) layers. Each CB layer includes a semiconductor layer having a first conductivity -type and a plurality of floating regions having a second conductivity-type disposed in a surface of the semiconductor layer. The plurality of floating regions and the semiconductor layer are both configured to substantially deplete to provide substantially equal amounts of charge from ionized dopants when a reverse bias is applied to the SiC-SJ device. |
申请公布号 |
WO2016210261(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2016US39242 |
申请日期 |
2016.06.24 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
LOSEE, Peter, Almem;BOLOTNIKOV, Alexander, Viktorovich;GHANDI, Reza |
分类号 |
H01L29/872;H01L21/329;H01L29/06;H01L29/16 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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