| 发明名称 |
Gate Electrodes and the Formation Thereof |
| 摘要 |
A method of fabricating a gate electrode for a semiconductor comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness t<SUB>p</SUB>, the first material being selected from the group consisting of Si, Si<SUB>1-x</SUB>-Ge<SUB>x </SUB>alloy, Ge and mixtures thereof and a layer of metal of thickness t<SUB>m</SUB>; and annealing the layers, such that substantially all of the first material and the metal are consumed during reaction with one another.
|
| 申请公布号 |
US2006128125(A1) |
申请公布日期 |
2006.06.15 |
| 申请号 |
US20040707968 |
申请日期 |
2004.01.29 |
| 申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
MANGELINCK DOMINIQUE;CHI DONGZHI;LAHIRI SYAMAL K. |
| 分类号 |
H01L21/20;H01L21/28;H01L21/285;H01L21/336;H01L21/36;H01L21/8238;H01L31/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
