Embodiments relate to manipulating and controlling the magnetic field profile of a magnetron (110) within a sputtering system dynamically (i.e., in real time) (100), to most effectively utilize the target material as required by any stage of its erosion and to sputter deposit films with a desired profile or characteristics. In particular, embodiments relate to dynamic positional and rotational control of the magnetron (110) or individual elements of the magnetron (110) to alter the magnetic field profile of the magnetron (110) during deposition.
申请公布号
WO2006019981(A3)
申请公布日期
2006.10.05
申请号
WO2005US25096
申请日期
2005.07.15
申请人
DEXTER MAGNETIC TECHNOLOGIES, INC.;HATCH, GARETH, P.;RAS, CHRISTOPHER, A.