| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the structure of a semiconductor storage device which can reduce leakage currents flowing through a bit line at the time of writing while restraining the increase of an area of a chip, and also provide its writing method. <P>SOLUTION: The semiconductor storage device is provided with; an N-type memory cell transistor having a first diffusion layer, a second diffusion layer, an electric charge accumulation layer formed on a semiconductor substrate between the first diffusion layer and the second diffusion layer, and a gate electrode; a power source circuit which is formed on the semiconductor substrate, connectable to the first diffusion layer, and increases a voltage supplied from an external power source and then outputs it; and a writing means which applies a reference voltage to the second diffusion layer, when writing is made to the N-type memory cell transistor, and makes currents flow between the first and second diffusion layers to accumulate electric charges in the electric charge accumulation layer by supplying a negative voltage to the reference voltage from the power source circuit to apply it to the first diffusion layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
