| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved quasi-substrate having a lattice constant lower than the lattice constant of GaAs, and a semiconductor device comprising the quasi-substrate. <P>SOLUTION: On a semiconductor substrate (1) made of GaAs, semiconductor layer arrangements (2, 13, 14, and 35) are given. The semiconductor layer arrangements (2, 13, 14, and 35) comprise many semiconductor layers of Al<SB>1-y</SB>Ga<SB>y</SB>As<SB>1-x</SB>P<SB>x</SB>[in the formula, 0≤x≤1, 0≤y≤1]. In this regard, some semiconductor layers comprise phosphorous proportion x. The proportion is larger than proportion in an adjacent semiconductor layer both in the growth direction of the semiconductor layer arrangement and under it. The invention comprises a semiconductor device comprising the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
