NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURE IT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element in which light extraction efficiency can be improved by extending an area near a p-type electrode pad, in which an emission is preferentially generated, and the drive voltage can be reduced by deconcentrating local current.

SOLUTION: A nitride semiconductor light-emitting element 200 is provided with: a substrate 201; an n-type nitride semiconductor layer 202 which is formed on the substrate; an active layer 203 and a p-type nitride semiconductor layer 204 which are formed in sequence on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode 205 which is formed on the p-type nitride semiconductor layer; a p-type electrode pad 206 which is formed on the transparent electrode and is separated from an outside edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-type electrode pad 207 which is formed on the n-type nitride semiconductor layer.

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