发明名称 |
Method for manufacturing an integrated semiconductor transistor device with parasitic bipolar transistor |
摘要 |
To attain a comparatively high breakdown voltage at a high avalanche strength and with the physical size simultaneously being as small as possible, the invention proposes constructing a transistor device in a semiconductor material region in which a first source/drain region is used as a source region and in which the source region has a comparatively reduced surface charge or surface charge density.
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申请公布号 |
US2007099373(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20060638612 |
申请日期 |
2006.12.13 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HIRLER FRANZ;STRACK HELMUT |
分类号 |
H01L21/8238;H01L21/336;H01L29/08;H01L29/16;H01L29/165;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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