| 摘要 |
A method of manufacturing a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate; forming a second semiconductor layer above the first semiconductor layer, the second semiconductor layer having a smaller selection ratio of wet-etching than the first semiconductor layer; forming a hole having the semiconductor substrate as a bottom face in a supporting member holding area by removing by etching the second semiconductor layer and the first semiconductor layer in the supporting member holding area; forming a supporting member film above the semiconductor substrate to fill in the hole and to cover the second semiconductor layer; forming a mask pattern above the supporting member film, the mask pattern covering a supporting member area and exposing another area; dry-etching the second semiconductor layer and the first semiconductor layer in sequence using the mask pattern as a mask to form a supporting member abutting on the semiconductor substrate at the bottom face of the hole, and to form an aperture face under the supporting member, the aperture face exposing a side face of the first semiconductor layer; forming a hollow section between the second semiconductor layer and the semiconductor substrate by wet-etching the first semiconductor layer via the aperture face; and forming an insulating film inside the hollow section. In this case, the supporting member area includes a first supporting member area, a second supporting member area intersecting the first supporting member area, and a protruding area protruding from an intersection between the first supporting member area and the second supporting member area, and the supporting member holding area is disposed at a position overlapping the protruding area in plan view and distant from the intersection area.
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