| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction photovoltaic power generation element exhibiting sufficient power generation efficiency, even if a transparent conductive film is deposited by sputtering, and to provide a method of manufacturing such a photovoltaic power generation element.SOLUTION: In a photovoltaic power generation element 10 including an n-type crystal semiconductor substrate 11, a p-type amorphous semiconductor thin film 13 and a first transparent conductive film 14 which are laminated in this order on one side of the n-type crystal semiconductor substrate 11, and an n-type amorphous semiconductor thin film 16 and a second transparent conductive film 17 which are laminated in this order on the other side of the n-type crystal semiconductor substrate 11, any one of the first and second transparent conductive films 14, 17 is a transparent conductive film (α) formed of indium oxide doped at least with tantalum. |
