发明名称 メモリダイのスタック内のバッファダイおよび方法
摘要 Memory devices and methods of making and operating them are shown. Memory devices shown include stacked memory dies with one or more buffer dies included. In one such memory device, a command die communicates with one or more downstream memory dies through the one or more buffer dies. The one or more buffer dies function to repeat signals, and can potentially improve performance for higher numbers of memory dies in the stack.
申请公布号 JP5701989(B2) 申请公布日期 2015.04.15
申请号 JP20130526208 申请日期 2011.08.31
申请人 マイクロン テクノロジー, インク. 发明人 ホリス,ティモシー
分类号 G11C5/00;H01L25/065;H01L25/07;H01L25/18 主分类号 G11C5/00
代理机构 代理人
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