发明名称 光電変換装置の作製方法
摘要 An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove.
申请公布号 JP5700665(B2) 申请公布日期 2015.04.15
申请号 JP20110128179 申请日期 2011.06.08
申请人 株式会社半導体エネルギー研究所 发明人 西 和夫;廣瀬 貴史;井坂 史人;楠本 直人
分类号 H01L31/0463 主分类号 H01L31/0463
代理机构 代理人
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