发明名称 |
METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR |
摘要 |
[Problem] To provide: a method for producing a thin film transistor with which variation and a deterioration in performance can be suppressed; and a thin film transistor. [Solution] This method for producing a thin film transistor 1 (1A) includes: a step in which a first conductive layer is formed on one main surface of a substrate 2 and a second conductive layer is formed on the other main surface of the substrate 2; a step in which a mask layer is collectively formed on the first conductive layer and second conductive layer; a step in which, by collectively bringing the first conductive layer and second conductive layer into contact with an etching liquid and removing a partial region of the first conductive layer and second conductive layer, a source electrode 6 and a drain electrode 7 are formed on the one main surface of the substrate 2 and a gate electrode 5 is formed on the other main surface of the substrate 2; and a step in which an organic semiconductor layer 3 is formed on the one main surface of the substrate 2 from which the first conductive layer has been removed. |
申请公布号 |
WO2016158182(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
WO2016JP56494 |
申请日期 |
2016.03.02 |
申请人 |
NISSHA PRINTING CO.,LTD. |
发明人 |
NADA, Hideaki;OMOTE, Ryomei;SHIGENO, Hirotaka;SAKATA, Yoshihiro;NAKAMURA, Kazuto;NAKAYA, Hayato |
分类号 |
H01L21/336;H01L21/28;H01L21/3205;H01L21/768;H01L21/8238;H01L23/522;H01L27/092;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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