APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT

摘要

Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

主权项

1. A device comprising:
an array of memory cells, including a first memory cell coupled to a bit line node and a word line node; a switching circuit to apply an electric potential to the first memory cell, wherein, with the first memory cell in a first state, the first memory cell generates a snapback event in response to the electric potential; a sense node coupled to one of the bit line node or the word line node; a limiting circuit to establish a voltage level at the sense node that is greater than a threshold sensed voltage level in response to an increase in an electric current through the first memory cell following the snapback event; and a sense circuit to initiate a change of the electric potential in response to the voltage level exceeding the threshold sensed voltage level.