发明名称 |
Forming of silicide areas in a semiconductor device |
摘要 |
An embodiment of a method for forming silicide areas of different thicknesses in a device comprising first and second silicon areas, comprising the steps of: implanting antimony or aluminum in the upper portion of the first silicon areas; covering the silicon areas with a metallic material; and heating the device to transform all or part of the silicon areas into silicide areas, whereby the silicide areas formed at the level of the first silicon areas are thinner than the silicide areas formed at the level of the second silicon areas.
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申请公布号 |
US2007099408(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20060592398 |
申请日期 |
2006.11.02 |
申请人 |
STMICROELECTRONICS CROLLES 2 SAS |
发明人 |
AIME DELPHINE;FROMENT BENOIT |
分类号 |
H01L21/4763;H01L21/3205 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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