| 摘要 |
PROBLEM TO BE SOLVED: To protect adhesion of conductive film that absorbs laser beam, and to improve the COD level and surge resistance, when cleaning end faces by plasma as a preprocessing step of coating the side faces of a resonator, in a semiconductor laser that uses a dielectric film. SOLUTION: A semiconductor laminate is obtained on an n-GaAs substrate and cleaved at each length of a resonator to obtain a bar-shaped semiconductor laser device with a pair of facing cleavage faces. Then, the bar-shaped semiconductor laser device is arranged inside an ECR sputtering apparatus with a silicon target formed therein; and after the sputtering apparatus is evacuated, a cleaning gas which is a mixture of argon gas and nitrogen gas is introduced into the plasma chamber to have ECR plasma generated. One side of the cleavage faces is exposed to plasma for a predetermined period of time; then continuingly, oxygen gas is introduced in place of nitrogen gas; and further bias is applied to the silicon target to constitute a silicon oxide film that serves as a low-reflection end surface protective film on the cleavage face. COPYRIGHT: (C)2008,JPO&INPIT
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