| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element in a structure capable of increasing the density of a cell in a trench MOSFET, and to provide a manufacturing method of the semiconductor element. SOLUTION: The semiconductor element includes: a first-conductivity-type semiconductor substrate (n-type substrate 50); a second-conductivity-type base region (p-type base region 54) formed on the semiconductor substrate 50; a high-concentration first-conductivity-type source region (n-type source region 56) that is formed in the base region 54 and is formed on a surface opposite to the substrate 50; and a first trench T1 and a second trench T2 that penetrate the source region 56 and the base region 54 for formation and have different width and different shape. COPYRIGHT: (C)2008,JPO&INPIT
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