发明名称 |
Fully Isolated High-Voltage MOS Device |
摘要 |
A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.
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申请公布号 |
US2009008711(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20070773365 |
申请日期 |
2007.07.03 |
申请人 |
WEI CHI-SAN;WU KUO-MING;LIN YI-CHUN |
发明人 |
WEI CHI-SAN;WU KUO-MING;LIN YI-CHUN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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