发明名称 |
THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor substrate for a liquid crystal display device preventing damage of a gate electrode when carrying out ion implantation in source/drain are of an active layer, and carrying out activation by irradiation of a laser beam. SOLUTION: The transistor substrate for a liquid crystal display device is provided with an active layer 4 comprised of a polycrystalline silicone film formed on a substrate 2, a gate insulation film 6 formed on the active layer 4, a metal layer 8 composing the gate electrode formed on the gate insulation film 6, and an insulation film 10 formed on the metal layer 8 and preventing damage of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009048199(A) |
申请公布日期 |
2009.03.05 |
申请号 |
JP20080232509 |
申请日期 |
2008.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JOO-HYOUNG;HUR JAE-HO |
分类号 |
G02F1/1333;G02F1/1368;G02F1/136;H01L21/336;H01L29/786 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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