发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a transistor substrate for a liquid crystal display device preventing damage of a gate electrode when carrying out ion implantation in source/drain are of an active layer, and carrying out activation by irradiation of a laser beam. SOLUTION: The transistor substrate for a liquid crystal display device is provided with an active layer 4 comprised of a polycrystalline silicone film formed on a substrate 2, a gate insulation film 6 formed on the active layer 4, a metal layer 8 composing the gate electrode formed on the gate insulation film 6, and an insulation film 10 formed on the metal layer 8 and preventing damage of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009048199(A) 申请公布日期 2009.03.05
申请号 JP20080232509 申请日期 2008.09.10
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE JOO-HYOUNG;HUR JAE-HO
分类号 G02F1/1333;G02F1/1368;G02F1/136;H01L21/336;H01L29/786 主分类号 G02F1/1333
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