| 摘要 |
PROBLEM TO BE SOLVED: To provide structure capable of easily providing an enhancement type HJFET in manufacturing the HJFET, and of reducing channel resistance in its enhancement operation, in a semiconductor device formed of a group-III nitride semiconductor, and having a heterojunction. SOLUTION: A gate part is formed to contact a barrier layer. A composition of InAlGaN constituting an InAlGaN barrier layer formed on a channel layer is selected to prevent generation of a secondary electron gas on a heterojunction interfacial surface between the barrier layer and the channel layer even in a state without forming the gate in a part immediately under the gate. An InAlGaN cap layer is formed as an upper layer of the InAlGaN barrier layer excluding an area immediately under the gate. The InAlGaN cap layer is formed of InAlGaN of a composition lattice-matching with a buffer layer, and generating secondary electrons on the interfacial surface between the barrier layer and the channel layer by spontaneous polarization. COPYRIGHT: (C)2009,JPO&INPIT |
