| 摘要 |
An etching method for a silicon dioxide substrate. The etching method comprises: S1, forming a mask pattern (200) on the surface of a silicon dioxide substrate (100), where the mask pattern (200) comprises a first groove (200a); S2, cooling the silicon dioxide substrate (100) and introducing a deposition process gas into a process chamber to form a passivation layer (300) on the sidewalls and the bottom of the first groove (200a); S3, warming the silicon dioxide substrate (100) and introducing a primary etching gas into the process chamber to etch the bottom of the first groove (200a); and, repeatedly executing step S2 and step S3 until a second groove having a predetermined depth-to-width ratio is formed at a position on the silicon dioxide substrate (100) corresponding to the first groove (200a). Also provided is an etching apparatus. The etching apparatus is structurally simple and inexpensive. Utilization of the etching method executed by the etching apparatus for etching the silicon dioxide substrate allows costs for the etching process to be reduced. |
