发明名称 Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly
摘要 Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the e-beam pattern includes using a computing system, inputting a DSA target pattern. Using the computing system, the DSA target pattern, a DSA model, and an EBPC model, an output EBPCed pattern is produced for an e-beam writer to write on a resist layer that overlies the semiconductor substrate.
申请公布号 US9023730(B1) 申请公布日期 2015.05.05
申请号 US201314072164 申请日期 2013.11.05
申请人 GLOBALFOUNDRIES, Inc. 发明人 Latypov Azat;Zou Yi;Dai Vito
分类号 H01L21/311;G06F17/50;H01L21/027;H01L21/033 主分类号 H01L21/311
代理机构 Ingrassia Fisher & Lorenz, P.C. 代理人 Ingrassia Fisher & Lorenz, P.C.
主权项 1. A method for fabricating an integrated circuit comprising: generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate, wherein the DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern, and wherein generating the e-beam pattern comprises: using a computing system, inputting a DSA target pattern; andusing the computing system, the DSA target pattern, a DSA model, and an EBPC model to produce an output EBPCed pattern for an e-beam writer to write on a resist layer that overlies the semiconductor substrate.
地址 Grand Cayman KY