发明名称 |
Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly |
摘要 |
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the e-beam pattern includes using a computing system, inputting a DSA target pattern. Using the computing system, the DSA target pattern, a DSA model, and an EBPC model, an output EBPCed pattern is produced for an e-beam writer to write on a resist layer that overlies the semiconductor substrate. |
申请公布号 |
US9023730(B1) |
申请公布日期 |
2015.05.05 |
申请号 |
US201314072164 |
申请日期 |
2013.11.05 |
申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Latypov Azat;Zou Yi;Dai Vito |
分类号 |
H01L21/311;G06F17/50;H01L21/027;H01L21/033 |
主分类号 |
H01L21/311 |
代理机构 |
Ingrassia Fisher & Lorenz, P.C. |
代理人 |
Ingrassia Fisher & Lorenz, P.C. |
主权项 |
1. A method for fabricating an integrated circuit comprising:
generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate, wherein the DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern, and wherein generating the e-beam pattern comprises:
using a computing system, inputting a DSA target pattern; andusing the computing system, the DSA target pattern, a DSA model, and an EBPC model to produce an output EBPCed pattern for an e-beam writer to write on a resist layer that overlies the semiconductor substrate. |
地址 |
Grand Cayman KY |