Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing at least a first gate stack layer protruding from a conductive layer on a substrate, wherein the first gate stack layer comprises a floating gate and a control gate on the floating gate; forming a first spacer on the conductive layer at a side of the first gate stack layer; and using the first spacer as a mask to remove a part of the conductive layer to form a select gate having a planar top surface.