发明名称 Semiconductor device and manufacturing method thereof
摘要 To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.
申请公布号 US2005040412(A1) 申请公布日期 2005.02.24
申请号 US20040941848 申请日期 2004.09.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOKUBO CHIHO;SHIGA AIKO;TANADA YOSHIFUMI;YAMAZAKI SHUNPEI
分类号 G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/15 主分类号 G02F1/1368
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