| 发明名称 |
NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESS |
| 摘要 |
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
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| 申请公布号 |
US2008030692(A1) |
申请公布日期 |
2008.02.07 |
| 申请号 |
US20060462413 |
申请日期 |
2006.08.04 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG HSIEN-CHENG;LIN CHIN-HSIANG;LEE H. J.;CHANG CHING-YU;LIN HUA-TAI;LIN BURN JENG |
| 分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
| 代理机构 |
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