| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of suppressing the generation of a crack in a nitride semiconductor, preventing a protective film from coming off in the end surface, and attaining an excellent characteristic and a long life. SOLUTION: The nitride semiconductor laser element comprises: a conductive substrate having a first main surface and a second main surface opposing to the first main surface; a nitride semiconductor layer arranged on the first main surface of the conductive substrate, where a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer are successively laminated; an electrode formed on the second main surface of the conductive substrate; and the protective film to be brought into contact with the resonator surface of the nitride semiconductor layer. The edge part at the side of the resonator surface in the electrode is positioned on the inner side of the laser element from the resonator surface. The protective film is brought into contact with the second main surface of the conductive substrate from the resonator surface. Crystalline structures are different between the protective film to be brought into contact with the resonator surface and the protective film to be brought into contact with the second main surface of the conductive substrate concerning the nitride semiconductor laser element. COPYRIGHT: (C)2008,JPO&INPIT |
