发明名称 Substrate Processing Apparatus and Semiconductor Device Producing Method
摘要 A substrate processing apparatus, comprising: a processing chamber which provides a space for flowing desired gas and for depositing a desired film on a substrate; a lamp unit group having at least one lamp unit which is disposed in the processing chamber and which includes a filament for heating the substrate and a lamp tube surrounding the filament; at least first and second casings which surround the lamp unit, the first casing surrounding the lamp unit and the second casing surrounding the first casing; and a refrigerant flowing apparatus for flowing cooling medium to a first space formed between the lamp unit and the first casing, and to a second space formed between the first casing and the second casing, is disclosed.
申请公布号 US2009011606(A1) 申请公布日期 2009.01.08
申请号 US20050577043 申请日期 2005.02.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SHINOZAKI KENJI
分类号 H01L21/30;C23C16/46;C23C16/52;H01L21/205;H01L21/26 主分类号 H01L21/30
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