| 摘要 |
In order to obtain high linearity without sacrificing light-receiving sensitivity and speed, an avalanche photodiode is provided with a multiplication layer (103) formed on a first light absorption layer (102), an n-type field control layer (104) formed on the multiplication layer (103), and a second light absorption layer (105) formed on the field control layer (104). Upon applying a reverse bias voltage, donor impurities in the field control layer (104) are ionized, and a high electric field is induced in the multiplication layer (103). The n-type doping amount in the field control layer (104) is set so that the impurity concentration in the second light absorption layer (105) is sufficiently depleted when the reverse bias is applied. |
