发明名称 Positive photoresist composition and pattern making method using the same
摘要 <p>Apositive photoresist composition containing: (A) a resin which contains at least one of a repeating unit represented by the formula (IA) defiend herein and a repeating unit represented by the formula (IB) defined herein, and is decomposed by an action of an acid and shows an increase in a solubility in an alkali developer; and (B) as compounds capable of generating an acid upon irradiation with one of an actinic ray and a radiation, at least two compounds selected from the compounds (B1), (B2), (B3) and (B4) as defiend herein.</p>
申请公布号 EP1508838(A2) 申请公布日期 2005.02.23
申请号 EP20040019818 申请日期 2004.08.20
申请人 FUJI PHOTO FILM CO., LTD. 发明人 KANNA, SHINICHI;MIZUTANI, KAZUYOSHI;SASAKI, TOMOYA
分类号 C08F20/10;C08F32/00;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 C08F20/10
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