发明名称 Optical latch and synaptic switch
摘要 An optoelectronic device may include an insulating substrate, a semiconductor channel region located on the insulating substrate, and a source region and a drain region in contact with the semiconductor channel region. A photoswitchable material may be located on the semiconductor channel region between the source region and the drain region, such that the photoswitchable material includes a first structural state based on being exposed to a first optical wavelength, and includes a second structural state based on being exposed to a second optical wavelength. The first structural state causes a first electrical current to flow between the source region and the drain region, while the second structural state causes a second electrical current to flow between the source region and the drain region.
申请公布号 US9041079(B1) 申请公布日期 2015.05.26
申请号 US201414312467 申请日期 2014.06.23
申请人 International Business Machines Corporation 发明人 Afzali-Ardakani Ali;Chen Tze-Chiang;Hekmatshoartabari Bahman
分类号 G11C13/04;H01L29/78;H01L51/44;H01L51/42;H01L29/06;H01L29/16;H01L51/00 主分类号 G11C13/04
代理机构 代理人 Razavi Keivan;Percello Louis
主权项 1. An optoelectronic device comprising: an insulating substrate; a semiconductor channel region located on the insulating substrate; a source region and a drain region in contact with the semiconductor channel region; and a photoswitchable material located on the semiconductor channel region between the source region and the drain region, the photoswitchable material including a first structural state based on being exposed to a first optical wavelength, and including a second structural state based on being exposed to a second optical wavelength, wherein the first structural state causes a first electrical current to flow between the source region and the drain region, and the second structural state causes a second electrical current to flow between the source region and the drain region.
地址 Armonk NY US