发明名称 |
Optical latch and synaptic switch |
摘要 |
An optoelectronic device may include an insulating substrate, a semiconductor channel region located on the insulating substrate, and a source region and a drain region in contact with the semiconductor channel region. A photoswitchable material may be located on the semiconductor channel region between the source region and the drain region, such that the photoswitchable material includes a first structural state based on being exposed to a first optical wavelength, and includes a second structural state based on being exposed to a second optical wavelength. The first structural state causes a first electrical current to flow between the source region and the drain region, while the second structural state causes a second electrical current to flow between the source region and the drain region. |
申请公布号 |
US9041079(B1) |
申请公布日期 |
2015.05.26 |
申请号 |
US201414312467 |
申请日期 |
2014.06.23 |
申请人 |
International Business Machines Corporation |
发明人 |
Afzali-Ardakani Ali;Chen Tze-Chiang;Hekmatshoartabari Bahman |
分类号 |
G11C13/04;H01L29/78;H01L51/44;H01L51/42;H01L29/06;H01L29/16;H01L51/00 |
主分类号 |
G11C13/04 |
代理机构 |
|
代理人 |
Razavi Keivan;Percello Louis |
主权项 |
1. An optoelectronic device comprising:
an insulating substrate; a semiconductor channel region located on the insulating substrate; a source region and a drain region in contact with the semiconductor channel region; and a photoswitchable material located on the semiconductor channel region between the source region and the drain region, the photoswitchable material including a first structural state based on being exposed to a first optical wavelength, and including a second structural state based on being exposed to a second optical wavelength, wherein the first structural state causes a first electrical current to flow between the source region and the drain region, and the second structural state causes a second electrical current to flow between the source region and the drain region. |
地址 |
Armonk NY US |