Method for Automatic Measurement of Failure in Subthreshold Region of MOS Transistor,申请号KR20040117533-传众专利搜索

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发明名称	Method for Automatic Measurement of Failure in Subthreshold Region of MOS Transistor
摘要
申请公布号	KR100664856(B1)	申请公布日期	2007.01.03
申请号	KR20040117533	申请日期	2004.12.30
申请人		发明人
分类号	H01L21/66	主分类号	H01L21/66
代理机构		代理人
主权项
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