| 摘要 |
A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a <111> direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a <111> direction.
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