Advanced Process Control for Semiconductor Processing

摘要

An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a dielectric layer. A first etch process parameter for the first substrate is determined. A trench is etched in the dielectric layer of the first substrate using the first etch process parameter. At least one aspect of the etched trench of the first substrate is measured. A second etch process parameter for the second substrate is determined using the measured aspect of the etched trench of the first substrate. A planarization process parameter for the first substrate is determined also using the measured aspect of the etched trench of the first substrate.