发明名称 PIEZOELECTRIC THIN FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a piozoelectric thin film element containing a potassium sodium niobate thin film having excellent piezoelectric characteristics. SOLUTION: The piozoelectric thin film element includes: on a substrate 1; a lower electrode 2; a KNbO<SB>3</SB>thin film 3; a piezoelectric thin film 4 formed of potassium sodium niobate of perovskite structure (expressed by (K<SB>x</SB>Na<SB>1-x</SB>)NbO<SB>3</SB>(0<x<1)), which has a film thickness of 0.2μm to 10μm and a specific inductive capacity in the range of 50 or more and 200 or less; and an upper electrode 5. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049355(A) 申请公布日期 2009.03.05
申请号 JP20070321590 申请日期 2007.12.13
申请人 HITACHI CABLE LTD 发明人 SHIBATA KENJI;OKA FUMITO
分类号 H01L41/09;C23C14/06;H01L41/18 主分类号 H01L41/09
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