| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio. |
| 申请公布号 |
US2016306240(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615131301 |
申请日期 |
2016.04.18 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Koyama Jun |
| 分类号 |
G02F1/1343;H01L29/786;H01L21/02;G02F1/1333;G02F1/1345;G02F1/1339;G02F1/1337;G02F1/1362;G02F1/1368;H01L27/12;G02F1/1335 |
主分类号 |
G02F1/1343 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Atsugi-shi JP |
