| 发明名称 |
NITRIDE SEMICONDUCTOR LAYERED BODY, METHOD FOR MANUFACTURING THE SAME, AND NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A nitride semiconductor layered body includes a Si substrate having a surface, as the principal surface, inclined at an off-angle of 0 degrees or more and 4.0 degrees or less with respect to a plane and a nitride semiconductor layer disposed on the Si substrate. |
| 申请公布号 |
US2016329419(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201515100557 |
申请日期 |
2015.01.06 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OGAWA Atsushi;TOHSAKI Manabu;FUJISHIGE Yohsuke;ITO Nobuyuki;OKAZAKI Mai;INOUE Yushi;TAJIRI Masayuki;TERAGUCHI Nobuaki |
| 分类号 |
H01L29/778;H01L29/66;H01L29/04;H01L21/02;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
Sakai City, Osaka JP |
