SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

摘要

A semiconductor arrangement and method of formation are provided. A semiconductor arrangement includes a first semiconductor device adjacent a second semiconductor device. The first semiconductor device includes a first gate over a first shallow well in a substrate. A first active area is in the first shallow well on a first side of the first gate. The second semiconductor device includes a second gate over a second shallow well. A third active area is in the second shallow well on a first side of the second gate. The second shallow well abuts the first shallow well in the substrate to form a P-N junction. The P-N junction increases capacitance of the semiconductor arrangement, as compared to a device without such a P-N junction.

主权项

1. A semiconductor arrangement, comprising:
a first semiconductor device comprising:
a first gate over a first shallow well formed in a substrate, the first shallow well comprising a first conductivity type;a first active area in the first shallow well on a first side of the first gate; anda second active area in the first shallow well on a second side of the first gate; and a second semiconductor device adjacent the first semiconductor device, the second semiconductor device comprising:
a second gate over a second shallow well formed in the substrate, the second shallow well comprising a second conductivity type; anda third active area in the second shallow well on a first side of the second gate, wherein:
a first sidewall of the first shallow well abuts a sidewall of the second shallow well, andthe second active area is disposed on a second side of the second gate and is shared by the first semiconductor device and the second semiconductor device.