| 摘要 |
PROBLEM TO BE SOLVED: To maintain desired characteristics of low leak current, high breakdown voltage and excellent step coverage together with a high dielectric constant in a dielectric composite structure for a semiconductor device.SOLUTION: In the dielectric composite structure, one or more leak block layers LBL, one or more laminate dielectric layers LDL and an alloy dielectric layer ADL or a co-deposition dielectric layer CDL are alternately disposed. Each of the laminate dielectric layer LDL, the alloy dielectric layer ADL and the co-deposition dielectric layer CDL includes a dopant integrated into a base dielectric layer BDL. The LDL is formed by integrating a doping layer into the BDL in accordance with a laminate method, the ADL is formed by integrating the dopant into the BDL in accordance with an alloying method, and the CDL is formed by pulsing both a BDL base material and the dopant in accordance with a co-deposition method. |
