发明名称 |
MICROELECTRONIC ASSEMBLIES FORMED USING METAL SILICIDE, AND METHODS OF FABRICATION |
摘要 |
Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board. |
申请公布号 |
WO2016137892(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
WO2016US18953 |
申请日期 |
2016.02.22 |
申请人 |
INVENSAS CORPORATION |
发明人 |
SHEN, Hong;WANG, Liang;SITARAM, Arkalgud, R. |
分类号 |
H01L21/768;H01L23/48;H01L25/065 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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