发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT LAYOUT STRUCTURE |
摘要 |
A semiconductor integrated circuit layout structure includes a first active region, a second active region isolating from the first active region, a gate structure straddling the first active region and the second active region, and a plurality of conductive structures. The first active region at two opposite sides of the gate structure respectively forms a first source region and a first drain region. The second active region at two opposite sides of the gate structure respectively forms a second source region and a second drain region. The conductive structures include a plurality of slot-type conductive structures and one island-type conductive structure. The slot-type conductive structures are respectively formed on the first source region, the first drain region, the second source region and the second drain region. The island-type conductive structure is formed on the gate structure. |
申请公布号 |
US2016329276(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201514859367 |
申请日期 |
2015.09.21 |
申请人 |
United Microelectronics Corp. |
发明人 |
Lin Shih-Chin;Hung Kuei-Chun;HU Jerry CHE JEN;Chen Ming-Jui;Hsu Chen-Hsien |
分类号 |
H01L23/528;H01L27/088;H01L27/115;H01L23/522;H01L23/00;H01L29/78;H01L29/06 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor integrated circuit (IC) layout structure comprising:
a first active region; a second active region isolated from the first active region; a gate structure extending along a first direction and straddling the first active region and the second active region, the first active region at two opposite sides of the gate structure respectively forming a first source region and a first drain region, and the second active region at the two opposite sides of the gate structure respectively forming a second source region and a second drain region; and a plurality of conductive structures comprising a plurality of slot-type conductive structures and one island-type conductive structure, the island-type conductive structure being formed on the gate structure, and the slot-type conductive structures respectively being formed on the first source region, the first drain region, the second source region, and the second drain region. |
地址 |
Hsin-Chu City TW |