发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT LAYOUT STRUCTURE
摘要 A semiconductor integrated circuit layout structure includes a first active region, a second active region isolating from the first active region, a gate structure straddling the first active region and the second active region, and a plurality of conductive structures. The first active region at two opposite sides of the gate structure respectively forms a first source region and a first drain region. The second active region at two opposite sides of the gate structure respectively forms a second source region and a second drain region. The conductive structures include a plurality of slot-type conductive structures and one island-type conductive structure. The slot-type conductive structures are respectively formed on the first source region, the first drain region, the second source region and the second drain region. The island-type conductive structure is formed on the gate structure.
申请公布号 US2016329276(A1) 申请公布日期 2016.11.10
申请号 US201514859367 申请日期 2015.09.21
申请人 United Microelectronics Corp. 发明人 Lin Shih-Chin;Hung Kuei-Chun;HU Jerry CHE JEN;Chen Ming-Jui;Hsu Chen-Hsien
分类号 H01L23/528;H01L27/088;H01L27/115;H01L23/522;H01L23/00;H01L29/78;H01L29/06 主分类号 H01L23/528
代理机构 代理人
主权项 1. A semiconductor integrated circuit (IC) layout structure comprising: a first active region; a second active region isolated from the first active region; a gate structure extending along a first direction and straddling the first active region and the second active region, the first active region at two opposite sides of the gate structure respectively forming a first source region and a first drain region, and the second active region at the two opposite sides of the gate structure respectively forming a second source region and a second drain region; and a plurality of conductive structures comprising a plurality of slot-type conductive structures and one island-type conductive structure, the island-type conductive structure being formed on the gate structure, and the slot-type conductive structures respectively being formed on the first source region, the first drain region, the second source region, and the second drain region.
地址 Hsin-Chu City TW