发明名称 |
Stacked Electronic Device and Method for Fabricating the Same |
摘要 |
A method for fabricating a stacked electronic device is provided. A first three-dimensional (3D) printing is performed to form a first insulating layer and a plurality of first redistribution layers (RDLs) on a first substrate. A second 3D printing is performed to form a second substrate and a plurality of through-substrate vias (TSVs) on the first insulating layer, in which the plurality of TSVs is electrically connected to the plurality of first RDLs. A third 3D printing is performed to form a second insulating layer and a plurality of second RDLs on the second substrate, in which the plurality of second RDLs is electrically connected to the plurality of TSVs. A plurality of contacts of a third substrate is bonded to the plurality of second RDLs, so that the substrate is mounted onto the second insulating layer. The disclosure also provides a stacked electronic device formed by such a method. |
申请公布号 |
US2016329244(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201615057973 |
申请日期 |
2016.03.01 |
申请人 |
Winbond Electronics Corp. |
发明人 |
CHIAO Yu-Cheng;CHAN Tung-Yi;LIN Chen-Hsi;HO Chia Hua;CHAN Meng-Chang;CHOU Hsin-Hung |
分类号 |
H01L21/768;H01L21/02;H01L25/065 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a stacked electronic device, comprising:
providing a first substrate; performing a first three-dimensional (3D) printing to form a first insulating layer and a plurality of first redistribution layers (RDLs) on the first substrate, wherein the plurality of first RDLs is embedded in the first insulating layer; performing a second 3D printing to form a second substrate and a plurality of through-substrate vias (TSVs) on the first insulating layer, wherein the plurality of TSVs passes through second substrate and is electrically connected to the plurality of first RDLs; performing a third 3D printing to form a second insulating layer and a plurality of second RDLs on the second substrate, wherein the plurality of second RDLs is embedded in the second insulating layer and electrically connected to the plurality of TSVs; and bonding a plurality of contacts of a third substrate to the plurality of second RDLs, so that the third substrate is mounted onto the second insulating layer. |
地址 |
Taichung City TW |