发明名称 Stacked Electronic Device and Method for Fabricating the Same
摘要 A method for fabricating a stacked electronic device is provided. A first three-dimensional (3D) printing is performed to form a first insulating layer and a plurality of first redistribution layers (RDLs) on a first substrate. A second 3D printing is performed to form a second substrate and a plurality of through-substrate vias (TSVs) on the first insulating layer, in which the plurality of TSVs is electrically connected to the plurality of first RDLs. A third 3D printing is performed to form a second insulating layer and a plurality of second RDLs on the second substrate, in which the plurality of second RDLs is electrically connected to the plurality of TSVs. A plurality of contacts of a third substrate is bonded to the plurality of second RDLs, so that the substrate is mounted onto the second insulating layer. The disclosure also provides a stacked electronic device formed by such a method.
申请公布号 US2016329244(A1) 申请公布日期 2016.11.10
申请号 US201615057973 申请日期 2016.03.01
申请人 Winbond Electronics Corp. 发明人 CHIAO Yu-Cheng;CHAN Tung-Yi;LIN Chen-Hsi;HO Chia Hua;CHAN Meng-Chang;CHOU Hsin-Hung
分类号 H01L21/768;H01L21/02;H01L25/065 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method for fabricating a stacked electronic device, comprising: providing a first substrate; performing a first three-dimensional (3D) printing to form a first insulating layer and a plurality of first redistribution layers (RDLs) on the first substrate, wherein the plurality of first RDLs is embedded in the first insulating layer; performing a second 3D printing to form a second substrate and a plurality of through-substrate vias (TSVs) on the first insulating layer, wherein the plurality of TSVs passes through second substrate and is electrically connected to the plurality of first RDLs; performing a third 3D printing to form a second insulating layer and a plurality of second RDLs on the second substrate, wherein the plurality of second RDLs is embedded in the second insulating layer and electrically connected to the plurality of TSVs; and bonding a plurality of contacts of a third substrate to the plurality of second RDLs, so that the third substrate is mounted onto the second insulating layer.
地址 Taichung City TW