INHIBITOR PLASMA MEDIATED ATOMIC LAYER DEPOSITION FOR SEAMLESS FEATURE FILL

摘要

Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

主权项

1. A substrate processing system for depositing film, comprising:
a processing chamber including a pedestal configured to support a substrate including a feature; a gas supply configured to selectively supply atomic layer deposition (ALD) process gas to the processing chamber and to selectively supply inhibitor gas to the processing chamber; a plasma generator configured to selectively generate inhibitor plasma in the processing chamber; and a controller configured to control the gas supply and the plasma generator, wherein the controller is further configured to:
perform a first ALD cycle in the processing chamber to deposit film on the substrate;after the first ALD cycle, expose the substrate in the processing chamber to the inhibitor plasma generated using the inhibitor gas for a predetermined period to create a varying passivated surface in the feature; andafter the predetermined period, perform a second ALD cycle in the processing chamber to deposit film on the substrate.