发明名称 METHOD OF MAKING POLYMER DEVICE
摘要 A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.
申请公布号 WO2005015982(A2) 申请公布日期 2005.02.24
申请号 WO2004GB03452 申请日期 2004.08.11
申请人 CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED;CHUA, LAY-LAY;HO, PETER, KIAN-HOON;SIRRINGHAUS, HENNING;FRIEND, RICHARD, HENRY 发明人 CHUA, LAY-LAY;HO, PETER, KIAN-HOON;SIRRINGHAUS, HENNING;FRIEND, RICHARD, HENRY
分类号 B05D5/12;H01L51/40 主分类号 B05D5/12
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