| 摘要 |
The component (1) has a vertical power semiconductor unit (2) with a contact surface that is electrically connected with a component of a chip carrier (5). A control contact surface is electrically connected with another component of the chip carrier. A diode is arranged on the latter contact surface of the vertical power semiconductor unit. The vertical power semiconductor unit is designed such that the bottom surface of the component of the chip carrier provides a mass contact surface of the semiconductor component. A flat conductor (6) protrudes from a plastic housing mass. An independent claim is also included for a method for manufacturing a power semiconductor component. |
