| 摘要 |
An ion implantation apparatus is provided to obtain an angle deviation, a divergence angle and/or a beam dimension in a y direction of an ion beam by including a simple structure composed of a front beam limiting shutter, a front shutter driving apparatus, a rear beam limiting shutter and a rear shutter driving apparatus. A front beam limiting shutter(32) blocks an ion beam(4), installed near the upper stream of a front multi point faraday(24) and having a side substantially parallel with an x direction. A front shutter driving apparatus(36) drives the front beam limiting shutter in a y direction. A rear beam limiting shutter(42) blocks the ion beam, installed near the upper stream of a rear multi point faraday(28) and having a side substantially parallel with the x direction. A rear shutter driving apparatus(46) drives the rear beam limiting shutter in the y direction.
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