发明名称 Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate
摘要 A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.
申请公布号 US9066433(B2) 申请公布日期 2015.06.23
申请号 US201214238097 申请日期 2012.08.10
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Kuromitsu Yoshirou;Nagatomo Yoshiyuki;Terasaki Nobuyuki;Sakamoto Toshio;Maki Kazunari;Mori Hiroyuki;Arai Isao
分类号 H01L23/10;H01L23/34;H05K3/10;H01L23/373;H05K1/09;H05K3/38;H05K1/02;C04B35/645;C04B37/02;H05K1/03;H05K3/00;H01L23/00 主分类号 H01L23/10
代理机构 Locke Lord LLP 代理人 Locke Lord LLP ;Armstrong, IV James E.;DiCeglie, Jr. Nicholas J.
主权项 1. A power module substrate, the substrate comprising: an insulating substrate; and a circuit layer that is formed on one surface of the insulating substrate, wherein the circuit layer is formed by bonding a first copper plate onto the one surface of the insulating substrate, and wherein, prior to bonding, the first copper plate consists essentially of: copper, andeither: a total of 1 to 100 mol ppm of one or more alkaline-earth elements, transition metal elements, and rare-earth elements; or100 to 1000 mol ppm of boron.
地址 Tokyo JP