| 摘要 |
PROBLEM TO BE SOLVED: To provide a bonding wire which enables the reduction in occurrence of an abnormal loop.SOLUTION: A bonding wire for semiconductor devices comprises: a core material including more than 50 mol% of a metal M; an intermediate layer formed on the surface of the core material, and including Ni, Pd, the metal M and inevitable impurities, in which the concentration of Ni is 15-80 mol%; and a coating layer formed on the intermediate layer, and including Ni, Pd and inevitable impurities, in which the concentration of Pd is 50-100 mol%. The metal M is Cu or Ag. The concentration of Ni in the coating layer is lower than that in the intermediate layer. |
