发明名称 DETERMINING A STATE OF A MEMRISTOR CELL
摘要 A disclosed example method involves, at a first time, biasing the selected control line to a first voltage, biasing a second one of control lines in an array to a second voltage, biasing the selected signal line to a third voltage to cause a sneak current through the second one of the control lines in the array, the third voltage different from the second voltage, and sampling and holding, via a subtraction circuit, the sneak current through the selected signal line. The disclosed example method also involves, at a second time after the first time, biasing the selected control line to a fourth voltage to cause a read current through the selected signal line, and measuring, via a sense circuit, the read current after the sneak current is removed from the selected signal line via the subtraction circuit.
申请公布号 WO2016137437(A1) 申请公布日期 2016.09.01
申请号 WO2015US17242 申请日期 2015.02.24
申请人 HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP 发明人 JEON, Yoocharn
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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