VACUUM CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a vacuum channel transistor which uses a gallium nitride-aluminum nitride mixed crystal semiconductor, and wherein the electron emission efficiency is improved and the threshold voltage for electron emission is decreased. This vacuum channel transistor comprises: a conductor substrate 11 that constitutes a gate electrode; an insulating layer 12 that is formed on the conductor substrate and is formed of an insulating body; a source electrode 131 that is formed on the insulating layer; and a drain electrode 132 that is formed on the insulating layer so as to face the source electrode. The source electrode is formed of a crystal of a gallium nitride-aluminum nitride mixed crystal semiconductor having a wurtzite structure, and is arranged so that the angle between the main emission direction of electrons and the c-axis direction of the crystal structure is 30° or less.