| 摘要 |
PROBLEM TO BE SOLVED: To obtain high carrier mobility and to enable to make large current. SOLUTION: This device is provided with an Si<SB>0.9</SB>Ge<SB>0.1</SB>C switching layer 14 in which impurities are not substantially doped and an SiC electron supply layer 10 formed in an in-groove wall substantially orthogonal to the switching layer surface of a groove provided on one part of the switching layer 14, which are adjacently provided in a channel region. COPYRIGHT: (C)2007,JPO&INPIT
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